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Effects of Si-doping on luminescence properties of InxGa1−xN epitaxial layers

✍ Scribed by Yamada, Yoichi; Taguchi, Tsunemasa; Sasaki, Fumio; Kobayashi, Shunsuke; Tani, Toshiro

Book ID
108342695
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
105 KB
Volume
189-190
Category
Article
ISSN
0022-0248

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Improvement of photoluminescence by Si d
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## Abstract We report on the effect of Si delta doping in the barriers of multi‐quantum wells (MQWs) grown by metalorganic chemical vapor deposition (MOCVD). The room temperature photoluminescence (PL) intensity of the MQW sample with Si delta doped barriers was improved by 33 times compared to tha