Effects of post-thermal treatment on the properties of rf reactive sputtered ITO films

✍ Scribed by D.K. Maurya

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 581 KB
• Volume: 38
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2006.09.009

✦ Synopsis

Indium tin oxide (ITO) thin film prepared by rf sputtering at various Ar-O 2 mixtures, were annealed at several temperatures. The electrical, optical and structural properties of the film were systematically investigated before and after post-thermal treatment. The influence of a reactive gas (O 2 ) on the sputtering rate of a metallic (indium/tin) alloy target was also investigated. The films were characterized by X-ray diffraction (XRD) measurement, scanning electron microscopy, and transmittance as a function of wavelength. The resistivity of 8.3 Â 10 À4 O cm has been achieved for the film thickness of 250 nm, deposited in pure Ar at room temperature (RT).