Effects of substrate temperature on properties of ITO–ZnO composition spread films fabricated by combinatorial RF magnetron sputtering

✍ Scribed by Gi-Seok Heo; In-Gi Gim; Jong-Woon Park; Kwang-Young Kim; Tae-Won Kim

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 696 KB
• Volume: 182
• Category: Article
• ISSN: 0022-4596
• DOI: 10.1016/j.jssc.2009.07.025

✦ Synopsis

We have fabricated ITO-ZnO composition spread films to investigate the effects of substrate temperature on their electrical and optical properties by using combinatorial RF magnetron sputtering. It turned out by X-ray measurement that the film with zinc contents above 16.0 at% [Zn/(In+Zn+Sn)] showed amorphous phase regardless of substrate temperature. The amorphous ITO-ZnO film had lower resistivity than polycrystalline films. When the films were deposited at 250 1C, the minimum resistivity of 3.0 Â 10 À4 O cm was obtained with the zinc contents of 16.0 at%. The indium content could be reduced as high as $30 at% compared to that of ITO for the films having similar resistivity ($10 À4 O cm).

However, a drastic increase of resistivity was observed for the ITO-ZnO films deposited at 350 1C, having zinc contents below 15.2 at%.