Effects of Pb(Mn,Nb)O3 doping on the properties of PZT-based films deposited on silicon substrates

✍ Scribed by Zhang, Tao ;Zhang, Shu-yi ;Wasa, Kiyotaka ;Zhang, Hui ;Chen, Zhao-jiang ;Shui, Xiu-ji ;Yang, Yue-tao

• Publisher: John Wiley and Sons
• Year: 2011
• Tongue: English
• Weight: 765 KB
• Volume: 208
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.201026561

✦ Synopsis

Abstract

Ternary perovskite compound films of Pb(Mn,Nb)O~3~‐PbZrO~3~‐PbTiO~3~ (PMnN/PZ/PT) with different doping ratios of PMnN into PZT(52/48) matrix are deposited on SrRuO~3~ buffered Si substrates by a radio frequency magnetron sputtering system. It is found that the crystal structures, orientations, lattice constants of the ternary compound films are strongly dependent on the doping ratios of PMnN as the doping ratios are changed from 6 to 30%. These sputtered films showed polycrystal structures with mixed crystal orientations of (001)/(100), (101), (111) perovskite phases. As the doping ratio of the PMnN is in the range of (5–20)%PMnN‐(95–80)%PZT, the doping greatly improves the ferroelectricity and piezoelectricity. The highest values of the effective transversal piezoelective coefficient, e~31,f~  = −16.94 C/m^2^, for the thin films is obtained at the doping ratio of 20%PMnN, which is much larger than that of the similar PZT‐based materials and benefit to make piezoelectric devices.