Effects of oxide interface traps and transient enhanced diffusion on the process modeling of PMOS devices

✍ Scribed by Vuong, H.-H.; Rafferty, C.S.; Eshraghi, S.A.; Lentz, J.L.; Zeitzoff, P.M.; Pinto, M.R.; Hillenius, S.J.

• Book ID: 114536501
• Publisher: IEEE
• Year: 1996
• Tongue: English
• Weight: 983 KB
• Volume: 43
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.502426