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Effects of KOH etching on the properties of Ga-polar n-GaN surfaces

✍ Scribed by Moldovan, G.; Roe, M. J.; Harrison, I.; Kappers, M.; Humphreys, C. J.; Brown, P. D.


Book ID
126645609
Publisher
Taylor and Francis Group
Year
2006
Tongue
English
Weight
711 KB
Volume
86
Category
Article
ISSN
1478-6435

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The etching characteristics of GaN films prepared by several different methods were investigated. The polarity of all the GaN samples was first determined by coaxial impact collision ion scattering spectroscopy (CAICISS). From the relationship between the etching characteristics and the polarity it