Characteristics of the GaN Polar Surface
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Li, Dongsheng ;Sumiya, M. ;Yoshimura, K. ;Suzuki, Y. ;Fukuda, Y. ;Fuke, S.
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Article
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2000
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John Wiley and Sons
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English
β 156 KB
The etching characteristics of GaN films prepared by several different methods were investigated. The polarity of all the GaN samples was first determined by coaxial impact collision ion scattering spectroscopy (CAICISS). From the relationship between the etching characteristics and the polarity it