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Characteristics of the GaN Polar Surface during an Etching Process in KOH Solution

✍ Scribed by Li, Dongsheng ;Sumiya, M. ;Yoshimura, K. ;Suzuki, Y. ;Fukuda, Y. ;Fuke, S.

Publisher: John Wiley and Sons
Year: 2000
Tongue: English
Weight: 156 KB
Volume: 180
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200007)180:1<357::aid-pssa357>3.0.co;2-f

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✦ Synopsis

The etching characteristics of GaN films prepared by several different methods were investigated. The polarity of all the GaN samples was first determined by coaxial impact collision ion scattering spectroscopy (CAICISS). From the relationship between the etching characteristics and the polarity it is confirmed that selective etching in KOH solution is consistent with the polarity rather than either the deposition method or the surface morphology. These etching characteristics are related to the polarity of the surface. etching property no etched no etched no etched no etched *) GaN films deposited by the listed growth methods. **) GaN films deposited on GaN substrates prepared by HVPE or MBE epitaxial films.

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