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Effects of interface states and temperature on the C-V behavior of metal/insulator/AlGaN/GaN heterostructure capacitors

✍ Scribed by Miczek, Marcin; Mizue, Chihoko; Hashizume, Tamotsu; Adamowicz, Bogusława


Book ID
120791695
Publisher
American Institute of Physics
Year
2008
Tongue
English
Weight
631 KB
Volume
103
Category
Article
ISSN
0021-8979

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## Abstract High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 °C in air. These high‐tempera