Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

✍ Scribed by Fagerlind, M.; Allerstam, F.; Sveinbjörnsson, E. Ö.; Rorsman, N.; Kakanakova-Georgieva, A.; Lundskog, A.; Forsberg, U.; Janzén, E.

• Book ID: 126826609
• Publisher: American Institute of Physics
• Year: 2010
• Tongue: English
• Weight: 431 KB
• Volume: 108
• Category: Article
• ISSN: 0021-8979
• DOI: 10.1063/1.3428442