Effects of high dose Bi+ implantation on Si : An atomic force and transmission electron microscopy study

✍ Scribed by Ch Angelov; J Faure; M Kalitzova; S Simov; T Tzvetkova; A Djakov

• Book ID: 104266099
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 793 KB
• Volume: 51
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/s0042-207x(98)00176-6

✦ Synopsis

The effect of bismuth ion implantation (dose range 10 15 -10 18 cm -2 ) on the surface morphology of monocrystalline silicon was investigated by Atomic Force Microscopy (AFM) and Cross-Sectional Transmission Electron Microscopy (XTEM) and the data obtained compared. The low levels of roughness observed at dose interval 10 15 -6×10 15 cm -2 could be related to an amorphous layer created at the target surface. Roughness increased at a dose of 8×10 15 cm -2 , where drastic changes in the morphology of the amorphous layer began, i.e. with nonepitaxial recrystallization of Si and simultaneous agglomeration of Bi in nanocrystals. The maximum surface roughness at a dose 1×10 18 cm -2 was related to the specific erosion of the surface in the form of hillocks connected to the extremely large value of the sputtering yield of Bi (61.8 at. i. -1 ) in comparison with the sputtering yield of Si (3 at. i. -1 ).