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Effects of germane flow rate in electrical properties of a-SiGe:H films for ambipolar thin-film transistors

✍ Scribed by Dominguez, Miguel; Rosales, Pedro; Torres, Alfonso; Flores, Francisco; Molina, Joel; Moreno, Mario; Luna, Jose; Orduña, Abdu

Book ID
122171508
Publisher
Elsevier Science
Year
2014
Tongue
English
Weight
924 KB
Volume
562
Category
Article
ISSN
0040-6090

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In this article, by investigating the influence of Ar flow rate on deposition rate and structural properties of hydrogenated silicon germanium (SiGe:H) films, we showed that the addition of Ar in the diluted gas efficiently improve the deposition rate and crystallinity due to an enhanced dissociatio