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Effects of device layout on the drain breakdown voltages in MuGFETs

✍ Scribed by Jin Young Kim; Chong Gun Yu; Jong Tae Park

Book ID: 113800532
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 704 KB
Volume: 51
Category: Article
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2011.07.010

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