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Effects of boron incorporation on the strain and photoluminescence properties of GaAsSb/GaAs quantum wells

✍ Scribed by Jia, Zhigang; Wang, Qi; Ren, Xiaomin; Liu, Xiaolong; Wang, Yifan; Yan, Yingce; Cai, Shiwei; Zhang, Xia; Huang, Yongqing

Book ID
121434269
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
441 KB
Volume
16
Category
Article
ISSN
1369-8001

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## Abstract Temperature dependent photoluminescence (PL), room temperature phototransmittance (PT), contactless electroreflectance (CER) and wavelength modulated surface photovoltage spectroscopy (WMSPS) measurements are utilized to study the effects of growth interruption times, combined with Sb e