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Effects of InAlAs strain reducing layer on the photoluminescence properties of InAs quantum dots embedded in InGaAs/GaAs quantum wells

✍ Scribed by Kong, Lingmin; Sun, Wei; Feng, Zhe Chuan; Xie, Sheng; Zhou, Yunqing; Wang, Rui; Zhang, Cunxi; Zong, Zhaocun; Wang, Hongxia; Qiao, Qian; Wu, Zhengyun

Book ID: 122316396
Publisher: Elsevier Science
Year: 2014
Tongue: English
Weight: 494 KB
Volume: 562
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2014.03.048

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