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Effects of annealing on the luminescent properties from defects formed in electron-irradiated GaN

✍ Scribed by L.M. Liang; X.J. Xie; Q.Y. Hao; Y. Tian; C.C. Liu

Book ID: 118496134
Publisher: Elsevier Science
Year: 2012
Tongue: English
Weight: 468 KB
Volume: 47
Category: Article
ISSN: 1350-4487
DOI: 10.1016/j.radmeas.2012.07.017

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