Influence of the built-in electric field on luminescent properties in self-formed single-GaN/AlxGa1−xN quantum dots

✍ Scribed by X. Zhao; S.Y. Wei; C.X. Xia

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 174 KB
• Volume: 39
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/j.physe.2007.04.011

✦ Synopsis

Based on the framework of effective-mass approximation and variational approach, the luminescent properties are investigated theoretically in self-formed wurtzite GaN/Al x Ga 1Àx N single-quantum dots (QDs). Considering the three-dimensional (3D) confinement of electron and hole pair and the strong built-in electric field effects, the exciton binding energy, the emission wavelength and the oscillator strength are calculated with and without the built-in electric field in detail. The results elucidate that the strong built-in electric field has a significant influence on luminescent properties of GaN/Al x Ga 1Àx N QDs.