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Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells

✍ Scribed by C. Chuo; C. Lee; T. Nee; J. Chyi

Book ID
123617443
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
316 KB
Volume
76
Category
Article
ISSN
0003-6951

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We report the results of calculations for the energies of confined electrons and holes and their wavefunction overlap in In x Ga 1--x N/GaN quantum wells (QWs) with an indium concentration of x = 15% in the well material. It is known that the observed increase in the photoluminescence lifetime with