Prestrained effect on the emission properties of InGaNâGaN quantum-well structures
✍ Scribed by Huang, Chi-Feng; Tang, Tsung-Yi; Huang, Jeng-Jie; Shiao, Wen-Yu; Yang, C. C.; Hsu, Chih-Wei; Chen, L. C.
- Book ID
- 120489752
- Publisher
- American Institute of Physics
- Year
- 2006
- Tongue
- English
- Weight
- 281 KB
- Volume
- 89
- Category
- Article
- ISSN
- 0003-6951
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## Abstract A high indium‐content blue light‐emitting diode (LED) structure grown on silicon (111), consisting of five very thin MOCVD‐grown In~0.2~Ga~0.8~N quantum wells (QWs), is shown by high resolution transmission electron microscopy (HRTEM) to contain structural defects in the active region.
The paper investigates the optical properties of InGaN/GaN single quantum well and multiple quantum well structures. For the multiple quantum well structure, we investigated the thickness dependence of the optical properties. Based on these studies, this paper presents 1. for the single quantum well