𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Effects of ambients on oxygen precipitation in silicon

✍ Scribed by S. M. Hu


Book ID
121800651
Publisher
American Institute of Physics
Year
1980
Tongue
English
Weight
557 KB
Volume
36
Category
Article
ISSN
0003-6951

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Effect of ramping anneals under inert or
✍ Ma, Xiangyang ;Tian, Daxi ;Gong, Longfei ;Yang, Deren πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 206 KB

## Abstract The formation of an oxygen precipitate denuded zone in nitrogen‐doped Czochralski (NCZ) silicon and conventional CZ silicon subjected to ramping anneals under Ar or O~2~ ambient has been investigated. It is revealed that the nitrogen doping is able to homogenize substantially the densit

Effect of oxygen precipitation on voids
✍ Xuegong Yu; Deren Yang; Xiangyang Ma; Jin Xu; Liben Li; Duanlin Que πŸ“‚ Article πŸ“… 2003 πŸ› Elsevier Science 🌐 English βš– 406 KB

The effect of oxygen precipitation on flow pattern defects (FPDs) relative to voids in bulk silicon was investigated. FPDs and voids were measured after different annealing time, and with various interstitial oxygen contents and bulk stacking faults (BSFs). It was found that, during annealing, inter