## Abstract The formation of an oxygen precipitate denuded zone in nitrogenβdoped Czochralski (NCZ) silicon and conventional CZ silicon subjected to ramping anneals under Ar or O~2~ ambient has been investigated. It is revealed that the nitrogen doping is able to homogenize substantially the densit
β¦ LIBER β¦
Effects of ambients on oxygen precipitation in silicon
β Scribed by S. M. Hu
- Book ID
- 121800651
- Publisher
- American Institute of Physics
- Year
- 1980
- Tongue
- English
- Weight
- 557 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.91546
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