Effect of oxygen precipitation on voids in bulk silicon

✍ Scribed by Xuegong Yu; Deren Yang; Xiangyang Ma; Jin Xu; Liben Li; Duanlin Que

• Book ID: 104305786
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 406 KB
• Volume: 66
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(02)00920-6

✦ Synopsis

The effect of oxygen precipitation on flow pattern defects (FPDs) relative to voids in bulk silicon was investigated. FPDs and voids were measured after different annealing time, and with various interstitial oxygen contents and bulk stacking faults (BSFs). It was found that, during annealing, interstitial oxygen in bulk silicon precipitated, however the FPDs density remained constant. The density of BSFs increased with annealing time at 1100 8C. After annealing, the morphology of voids was found to be octahedral with the oxide films inside them, the same as as-grown samples. Therefore, it is concluded that the interstitial silicon atoms released during oxygen precipitation did not enter the voids because of the resistance of the oxide films inside the voids, but condensed into stacking faults. The dissolution of the oxide films is believed to be the principal cause for the annihilation of voids.