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Effect of β-irradiation on photoluminescence of MOCVD grown GaN

✍ Scribed by Abdul Majid; M. Israr; Jianjun Zhu; Akbar Ali

Publisher
Springer US
Year
2008
Tongue
English
Weight
241 KB
Volume
20
Category
Article
ISSN
0957-4522

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Photoluminescence of Mg-doped m-plane Ga
Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates
✍ Monemar, Bo ;Paskov, Plamen ;Pozina, Galia ;Hemmingsson, Carl ;Bergman, Peder ;L 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 355 KB

## Abstract Photoluminescence (PL) properties are reported for a set of __m__‐plane GaN films with Mg doping varied from mid 10^18^ cm^−3^ to above 10^20^ cm^−3^. The samples were grown with MOCVD at reduced pressure on low defect density bulk GaN templates. The sharp line near bandgap bound excito