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Effect of uniaxial mechanical stress on Shubnikov-de Haas oscillations in hole channels of silicon field-effect transistors

✍ Scribed by S. I. Dorozhkin; G. Landwehr


Book ID
114988130
Publisher
SP MAIK Nauka/Interperiodica
Year
1996
Tongue
English
Weight
71 KB
Volume
64
Category
Article
ISSN
0021-3640

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A simple four-point-bending setup integrated with a foil strain gauge is presented for the direct measurement of mechanical stress (MS) on metal-oxide-semiconductor field-effect transistors (MOSFETs). The magnitude of the external MS applied to MOSFETs can be directly obtained through the resistance