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Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs

โœ Scribed by Ju Young Lim; Jin Dong Song; Hae Suk Yang

Book ID
116943638
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
942 KB
Volume
520
Category
Article
ISSN
0040-6090

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## Abstract In this study, we have attempted a growth of InSb film on the costโ€effective, (001)โ€Si substrate inserting a thin intermediateโ€layer of InAs quantum dots (QDs) at the InSb/Si interface. Analysis of the interface region using transmission electron microscopy reveals that, during the subs