β Scribed by A. Kimura; C.A. Lee
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
The growth kinetics of Sic epitaxial layers has been investigated by sublimation sandwichmethod in vacuum a t temperature range from 1600 to 2100 O C . The limiting stages of the crystallization process have been determined. Silicon deficit in the growth cell was shown to result in the great retardi
## Abstract Structural defects of Ξ±βSiC epitaxial layers grown by sublimation βsandwichβmethodβ in vacuum at the temperatures ranging from 1600 to 2100 Β°C have been investigated by Xβray topography and optical microscopy methods. It was shown, that perfect SiC layers with the homogeneous polytype s
Mass spectrometric studies of the products of the reaction of XeFz with silicon in the dark and under visible illumination have been carried out. The data show that photoenhancement of the reaction is substantiaUy different from thermal enhancement. It is proposed that photogenerated charge carriers