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Non-thermal effects in laser-enchanced etching of silicon by XeF2

โœ Scribed by F.A. Houle


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
412 KB
Volume
95
Category
Article
ISSN
0009-2614

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โœฆ Synopsis


Mass spectrometric studies of the products of the reaction of XeFz with silicon in the dark and under visible illumination have been carried out. The data show that photoenhancement of the reaction is substantiaUy different from thermal enhancement. It is proposed that photogenerated charge carriers influence strongly both the overall etch rate and the reaction product diitribution.


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