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Effect of the design and technology factors on electrical characteristics of the Au/Ti-n-GaAs Schottky diodes

✍ Scribed by D. N. Zakharov; V. M. Kalygina; A. V. Netudykhatko; A. V. Panin

Book ID
111443552
Publisher
Springer
Year
2006
Tongue
English
Weight
259 KB
Volume
40
Category
Article
ISSN
1063-7826

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Grain boundary effect on the electrical
Grain boundary effect on the electrical characteristics of Auξ—Έnξ—ΈGaSb Schottky diodes
✍ S. Basu; U.N. Roy πŸ“‚ Article πŸ“… 1991 πŸ› Elsevier Science 🌐 English βš– 137 KB

Schottky diodes were fabricated by depositing gold on a single grain and on grains incorporating a grain boundary of tellurium-doped GaSb crystals grown by the vertical Bridgman method. The barrier height (Β’B.), series resistance (R), dark saturation current density (Js) and the ideality factor (n)