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Effect of alloying behavior on the electrical characteristics of n-GaAs Schottky diodes metallized with W, Au, and Pt

✍ Scribed by Sinha, A. K.

Book ID
121706776
Publisher
American Institute of Physics
Year
1973
Tongue
English
Weight
369 KB
Volume
23
Category
Article
ISSN
0003-6951

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Schottky diodes were fabricated by depositing gold on a single grain and on grains incorporating a grain boundary of tellurium-doped GaSb crystals grown by the vertical Bridgman method. The barrier height (Β’B.), series resistance (R), dark saturation current density (Js) and the ideality factor (n)