Effect of substrate photoexcitation on the dynamics of the Si-H stretch for Si(111)/H
β Scribed by P. Guyot-Sionnest
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 795 KB
- Volume
- 64-65
- Category
- Article
- ISSN
- 0368-2048
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π SIMILAR VOLUMES
The chemically prepared, ideally H-terminated Si( I I1 ) surfaces are characterized by a single Si-H stretching vibration with a remarkably small inhomogeneous broadening ( ~0.05 cm-'). The lineshape associated with this inhomogeneous broadening is analyzed here by considering two effects, both clos
The n 1 (A 1 ) and n 4 (E) Si-H stretching fundamentals of H 3 SiD have been recorded at an effective resolution of 0.006 cm 01 between 2050 and 2300 cm 01 . A total of about 2500 rovibrational transitions of the H 3 28 SiD isotopomer have been assigned with J up to 27 and K up to 22. A large number