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The Si–H Stretching Fundamentals of H328SiD

✍ Scribed by L. Fusina; E. Cané; R. Escribano; H. Bürger

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
334 KB
Volume
184
Category
Article
ISSN
0022-2852

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✦ Synopsis

The n 1 (A 1 ) and n 4 (E) Si-H stretching fundamentals of H 3 SiD have been recorded at an effective resolution of 0.006 cm 01 between 2050 and 2300 cm 01 . A total of about 2500 rovibrational transitions of the H 3 28 SiD isotopomer have been assigned with J up to 27 and K up to 22. A large number of ''perturbation allowed'' Dk Å {3 transitions have been identified in both the n 1 and n 4 bands. The assigned transitions have been analyzed using two different theoretical models, which took into account several rovibrational interactions between and within the £ 1 Å 1 and £ 4 Å 1 states, yielding a standard deviation of each fit of ca. 0.0004 cm 01 , which may be compared with the experimental precision (ca. 0.0001 cm 01 ). Improved ground state parameters have also been obtained by means of ground state combination differences.

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