Lineshape analysis of the SiH stretching mode of the ideally H-terminated Si(111) surface: the role of dynamical dipole coupling
✍ Scribed by P. Jakob; Y.L. Chabal; Krishnan Raghavachari
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 818 KB
- Volume
- 187
- Category
- Article
- ISSN
- 0009-2614
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✦ Synopsis
The chemically prepared, ideally H-terminated Si( I I1 ) surfaces are characterized by a single Si-H stretching vibration with a remarkably small inhomogeneous broadening ( ~0.05 cm-'). The lineshape associated with this inhomogeneous broadening is analyzed here by considering two effects, both closely related to finite size effects of an array of coupled dipoles: influence on the spectrum of (a) normal modes other than the commonly observed in-phase vibration and (b) the domain size distribution. Roth effects lead to asymmetric lineshapes with a low frequency tail, in agreement with the data. A quantitative analysis reveals that the best samples have perfect ( 1 x 1) domains containing 5 x IO3 Si-H units ( a 6 x IO' A2) on average with a 30% distribution.
The dynamical coupling between a&acenf domains and its influence on the quantitative analysis is also briefly addressed.