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Effect of Si on photoluminescence of GaN

✍ Scribed by Mohammad Rezaul Huque Khan; Yoshio Ohshita; Nobuhiko Sawaki; Isamu Akasaki

Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
358 KB
Volume
57
Category
Article
ISSN
0038-1098

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✍ Kun Zhong; Zhisong Xiao; Xiangqian Cheng; Fang Zhu; Lu Yan; Feng Zhang; Guoan Ch πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 390 KB

Silicon ions were implanted into SiO 2 thin films with various doses and energies. For the films implanted with various ion doses the photoluminescence (PL) intensity of 470 nm firstly increased with the increase of Si ion dose, which is similar to the variation trend of displacement per atom (DPA)