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The effect of size distributions of Si nanoclusters on photoluminescence from ensembles of Si nanoclusters

✍ Scribed by Xiaoshuang Chen; Jijun Zhao; Guanghou Wang; Xuechu Shen


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
435 KB
Volume
212
Category
Article
ISSN
0375-9601

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Silicon ions were implanted into SiO 2 thin films with various doses and energies. For the films implanted with various ion doses the photoluminescence (PL) intensity of 470 nm firstly increased with the increase of Si ion dose, which is similar to the variation trend of displacement per atom (DPA)