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The effect of AlGaN and SiN interlayers on GaN/Si(111)

✍ Scribed by M. B. Charles; M. J. Kappers; C. J. Humphreys


Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
158 KB
Volume
2
Category
Article
ISSN
1862-6351

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High temperature pulsed measurements of
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## Abstract DC‐ and RF‐pulsed measurements of AlGaN/GaN HEMTs on high resistive silicon (111) substrate are achieved under probes in the 300–525 K temperature range. Current collapse and heating effects are studied and it demonstrates the high temperature properties of these devices. Hence the pote