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Effect of reactive ion etching and post-etching annealing on the electrical characteristics of indium-tin oxide/silicon junctions

✍ Scribed by BI-SHIOU Chiou; KING-LONG Wu

Book ID: 110269144
Publisher: Springer US
Year: 1998
Tongue: English
Weight: 511 KB
Volume: 9
Category: Article
ISSN: 0957-4522
DOI: 10.1023/a:1008869724623

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