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Effect of pressure on the 2D carrier concentration in GaSb/InAs/GaSb quantum well system

โœ Scribed by A. N. Voronovskii; E. M. Dizhur; E. S. Itskevich; L. M. Kashirskaya; R. A. Stradling


Book ID
110118043
Publisher
SP MAIK Nauka/Interperiodica
Year
1997
Tongue
English
Weight
128 KB
Volume
39
Category
Article
ISSN
1063-7834

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โœ G Comanescu; R.J Wagner; B.D McCombe; B.V Shanabrook; B.R Bennett; S.K Singh; J. ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 104 KB

The electronic and optical properties of InAs=GaSb heterostructures depend on the type of bonding at the interfaces, InSb bonds or GaAs bonds. We have studied cyclotron resonance (CR) in the far-infrared on two samples, each consisting of a single 30 nm InAs quantum well surrounded by thick GaSb bar