Heterostructure interface effects on the far-infrared magneto-optical spectra of InAs/Gasb quantum wells
✍ Scribed by G Comanescu; R.J Wagner; B.D McCombe; B.V Shanabrook; B.R Bennett; S.K Singh; J.G Tischler; B.A Weinstein
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 104 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
The electronic and optical properties of InAs=GaSb heterostructures depend on the type of bonding at the interfaces, InSb bonds or GaAs bonds. We have studied cyclotron resonance (CR) in the far-infrared on two samples, each consisting of a single 30 nm InAs quantum well surrounded by thick GaSb barriers. The only intended di erence between the samples is the interface bonding type, Ga-As bonds and In-Sb bonds. The CR for the sample with Ga-As interface bonds shows two lines whose positions are determined by nonparabolicity e ects, whereas the sample with In-Sb bonds shows multiple lines due to strong cross-interface coupling between the InAs conduction band Landau levels (LLs) and the valence band LLs in GaSb. We ÿnd that the CR is a sensitive probe of interface bonding type for such structures.