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The effects of inversion asymmetry on subband structures in GaSb-InAs-GaSb quantum wells

✍ Scribed by J. Luo; H. Munekata; F.F. Fang; P.J. Stiles

Book ID
118363840
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
286 KB
Volume
229
Category
Article
ISSN
0039-6028

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A novel quantum well structure is proposed based on a type II staggered bandoffset material system, for example, an AlSb/InAs/GaSb/AlSb quantum well[1]. In this type of quantum well, the valence band of GaSb is higher than the conduction band of InAs. The overlap band offset property of this quantum