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Effect of post-oxidation annealing on the electrical properties of deposited oxide and oxynitride films on strained-Si 0.82 Ge 0.18 layers

✍ Scribed by Samanta, S K; Maikap, S; Bera, L K; Banerjee, H D; Maiti, C K

No coin nor oath required. For personal study only.

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