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Effects of thermal annealing on the electrical properties of tetraethylorthosilicate-based oxynitride films deposited on strained-Si 1 x Ge x

✍ Scribed by Samanta, S K; Bera, L K; Benerjee, H D; Maiti, C K

Book ID
121454080
Publisher
Institute of Physics
Year
2002
Tongue
English
Weight
158 KB
Volume
17
Category
Article
ISSN
0268-1242

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