## Abstract Electronic and optical properties of 440 and 530 nm staggered InGaN/InGaN/GaN quantum‐well (QW) light‐emitting diodes are investigated using the multiband effective‐mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The staggered QW structure req
Effect of polarization state on optical properties of blue-violet InGaN light-emitting diodes
✍ Scribed by Yen-Kuang Kuo; Syuan-Huei Horng; Sheng-Horng Yen; Miao-Chan Tsai; Man-Fang Huang
- Publisher
- Springer
- Year
- 2009
- Tongue
- English
- Weight
- 893 KB
- Volume
- 98
- Category
- Article
- ISSN
- 1432-0630
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