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Effect of oxide tunneling on the measurement of MOS interface states

✍ Scribed by M. Giannini; A. Pacelli; A. Lacaita; L. Perron

Book ID: 126652503
Publisher: IEEE
Year: 2000
Tongue: English
Weight: 63 KB
Volume: 21
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.852965

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