Effect of Ni3+ concentration on the resistive switching behaviors of NiO memory devices

✍ Scribed by Ma, Guokun; Tang, Xiaoli; Zhong, Zhiyong; Zhang, Huaiwu; Su, Hua

• Book ID: 123321521
• Publisher: Elsevier Science
• Year: 2013
• Tongue: English
• Weight: 421 KB
• Volume: 108
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2013.03.043