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Effect of microstructure on the arsenic profile in implanted silicon

โœ Scribed by W.A. Coghlan; M.H. Rhee; J.M. Williams; L.A. Streit; P. Williams


Book ID
113277448
Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
637 KB
Volume
16
Category
Article
ISSN
0168-583X

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The effect of implantation temperature and oxygen dose on the structure of as-implanted separation by implantation of oxygen (SIMOX) wafers was studied by means of Rutherford backscattering spectrometry and ion channelling, secondary ion mass spectrometry and cross-sectional transmission electron mi