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Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films

✍ Scribed by Honda, Takahiko; Ikeda, Kazuma; Inagaki, Makoto; Suzuki, Hidetoshi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi


Book ID
120312835
Publisher
Institute of Pure and Applied Physics
Year
2011
Tongue
English
Weight
503 KB
Volume
50
Category
Article
ISSN
0021-4922

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## Abstract We grew epitaxial (110) Cu~2~O films on (110) MgO substrates toward high‐mobility __p__‐channel oxide thin‐film transistors (TFTs). The (110) Cu~2~O films exhibited high Hall mobilities ∼90 cm^2^(Vs)^βˆ’1^ comparable to those of high‐quality single‐crystals, which were obtained in a narro