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Growth of Al-doped p-type films by molecular beam epitaxy and the effect of high-temperature annealing on their electrical properties

✍ Scribed by M. Takeishi; Y. Matsumoto; R. Sasaki; T. Saito; T. Suemasu

Publisher: Elsevier
Year: 2011
Tongue: English
Weight: 297 KB
Volume: 11
Category: Article
ISSN: 1875-3892
DOI: 10.1016/j.phpro.2011.01.030

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