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Effect of ion doping on the dislocation-related photoluminescence in Si+-implanted silicon

✍ Scribed by Mikhaylov, A. N.; Belov, A. I.; Korolev, D. S.; Timofeeva, A. O.; Vasiliev, V. K.; Shushunov, A. N.; Bobrov, A. I.; Pavlov, D. A.; Tetelbaum, D. I.; Shek, E. I.

Book ID
121551968
Publisher
Springer
Year
2014
Tongue
English
Weight
482 KB
Volume
48
Category
Article
ISSN
1063-7826

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## Abstract The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial‐related centres, particularly the W‐centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon‐interstitial and boron‐int