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Dislocation annihilation by silicon delta-doping in GaN epitaxy on Si

✍ Scribed by Contreras, O.; Ponce, F. A.; Christen, J.; Dadgar, A.; Krost, A.

Book ID: 120312636
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 578 KB
Volume: 81
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1529309

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