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Effect of ion beam bombardment on the carbide in M2 steel modified by ion-beam-assisted deposition

โœ Scribed by X.Y Li; F.J Wang; Y.K Wang; T.C Ma

Book ID
108025659
Publisher
Elsevier Science
Year
1991
Tongue
English
Weight
565 KB
Volume
147
Category
Article
ISSN
0921-5093

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The effects of nitrogen-beam voltage on the structure, stress, energy band gap and hardness of AIN thin films deposited on Si (1 1 1), Si (1 00) and sapphire (0001) by ion beam assisted deposition (IBAD) are reported. As the nitrogen-beam voltage was increased from 50 to 200 V, the stress and disord