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Effect of impact ionization on CJC of heterojunction bipolar transistors

✍ Scribed by J.S. Yuan; J.H. Ning


Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
243 KB
Volume
38
Category
Article
ISSN
0038-1101

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Modelling of heterojunction bipolar tran
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This work describes an approach for small signal modelling of GaAs-based ( ) ( heterojunction bipolar transistors HBTs for low-voltage r r r r r high-power application i.e., 4 2 ) V s 3 V, J s 3 = 10 A r r r r r cm . The parameter extraction procedure is discussed in ce c detail. Furthermore, it is