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Effect of hydrogenation on defect levels in bulk n-GaAs

โœ Scribed by T. W. Kang; I. H. Bai; C. Y. Hong; C. K. Chung; T. W. Kim

Book ID
105099769
Publisher
Springer
Year
1993
Tongue
English
Weight
314 KB
Volume
28
Category
Article
ISSN
0022-2461

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โœ O.A. Soltanovich; E.B. Yakimov; E.V. Erofeev; V.A. Kagadei; J. Weber ๐Ÿ“‚ Article ๐Ÿ“… 2009 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 236 KB

A deep trap with energy level at E C -0.45 eV is detected in n-type GaAs epilayers after hydrogenation. This level exhibits a bias-dependent annealing behaviour in the temperature range 290-400 K. The relation of this defect to the well-known metastable hydrogen-related M3/M4 defect is discussed.